587.37 Kb K 3264 fet transistorAbstract: r& T O K O FEATURES Available in ± 2.0% or ± 1.0% Output Tolerance Active High On/Off Control, to a logic high level. Quick reference data Table 2: Quick reference data Symbol Parameter Typ, V - gate-source voltage (DC) Unit 55 - RGS = 20 k Max - drain-source, -55A BUK7608-55A Philips Semiconductors TrenchMOSTM standard level FET 03na19 120 Pder 03nh50 Philips Semiconductors Original. Description N-channel enhancement mode field-effect power transistor in a plastic package, standard level FET 5. 173.99 Kb K 3264 fet transistorAbstract: BUK7608-55A BUK7508-55A BUK7608-55A TrenchMOSTM standard level FET Rev.Ġ2 - 17 January 2002 Product data 1. Limiting values In accordance with the Absolute Maximum, drain-source voltage Tj 25 ☌ Tj 175 ☌ - 55 V VDGR drain-gate voltage RGS = 20 k NXP Semiconductors Original. Symbol Quick reference ntinued Parameter Conditions Min Typ, level FET 4. 03 - 14 June 2010 Product data sheet, FET Table 1. This product has been designed and, BUK7608-55A N-channel TrenchMOS standard level FET Rev. 2143.89 Kb K 3264 fet transistorAbstract: BUK7608-55A Transistor ( FET) in a plastic package using TrenchMOS technology.
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